1 of 3 z ibo seno electronic engineering co., ltd. www.senocn.com 1SS400G 1SS400G silicon epitaxial planar switching diode for high speed switching application features ? ultra small surface mounting type ? high reliability absolute maximum ratings (t a = 25 o c) parameter symbol value unit peak reverse voltage v rm 90 v reverse voltage v r 80 v average rectified forward current i f(av) 100 ma peak forward current i fm 225 ma non-repetitive peak forward surge current (at t = 1 s) i fsm 500 ma junction temperature t j 150 o c storage temperature range t stg - 55 to + 150 o c characteristics at t a = 25 o c parameter symbol max. unit forward voltage at i f = 100 ma v f 1.2 v reverse current at v r = 80 v i r 0.1 a capacitance between terminals at v r = 0.5 v, f = 1 mhz c t 3 pf reverse recov ery time at v r = 6 v, i f = 10 ma, r l = 100 ? t rr 4 ns anode 2 top view marking c ode: " ** " simplified outline sod-723 and symbol 1 ** 2 pinni n g 1 pi n cathode description a l l d a t a s h e e t
2 of 3 z ibo seno electronic engineering co., ltd. www.senocn.com 1SS400G 1SS400G a l l d a t a s h e e t
3 of 3 z ibo seno electronic engineering co., ltd. www.senocn.com 1SS400G 1SS400G package outline plastic surface mounted package sod-723 package outline dimensions (units: mm) 10.1 0.60 . 1 0.280.05 0.10. 05 1.40. 1 0.20.05 0.520 .0 5 a l l d a t a s h e e t
|
